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Bipolar Junction Transistor-Basic Electronics MCQs With Answers Part 3





Bipolar Junction Transistor (BJT) MCQs of Basic electronics questions. This mcqs are useful in your university Sppu exams, placements exams, GATE and others.

Click to read part 1

Click to read part 2

Before solving this questions I suggest you must read this basic electronics

1. The packaging density of MOSFETs is ______ as compared to BJT.
a. less
b. high
c. same
d. none of the above

Ans: b

2. Because of insulated gate, MOSFET is also called _______.
a. INFET
b. IGFET
c. IMOSFET
d. IGMOSFET

Ans: b

3. In a enhancement mode MOSFET, the channel is ______.
a. always present
b. always absent
c. initially absent
d. none of the above

Ans: c

4. For an n-channel EMOSFET VT is ____.
a. negative
b. zero
c. positive
d. none of the above

Ans: c


5. For an EMOSFET ID=0 for ________.
a. VGS > VT
b. VGS < VT
c. VDS < VT
d. none of the above

Ans: b

6. In order to operate EMOSFET as an amplifier we have to operate it in ___ region.
a. ohmic
b. saturation
c. cut-off
d. none of the above

Ans: b

7. The EMOSFET acts as a ____ for VGS < VT.
a. open switch
b. closed switch
c. resistor
d. none of the above

Ans: a
 

8. For an n-channel EMOSFET,ID _ for VGS=0.
a. zero
b. IDSS
c. infinite
d. none of the above

Ans: a

9. In n-channel EMOSFET channel is ___ when VGS > VT.
a. disappeared
b. induced
c. none of these
d. all of the above

Ans: b

10. By connecting drain and gate terminals together EMOSFET can be used as ______.
a. amplifier
b. open switch
c. resistor
d. none of the above

Ans: c
 

11. In n-channel EMOSFET, the conduction begins when _____.
a. VGS=VT
b. VDS=VP
c. VDS=VDD
d. none of the above

Ans: a
 

12. In enhancement type MOSFET, channel is present initially.
a. The statement is false since channel is enhanced by applying gate voltage
b. The statement is true
c. No concept of channel is there
d. All the above are false

Ans: a

13. For an EMOSFET, the relation between ID and VGS is ______.
a. ID=k(VGS-VT)
b. ID=k2(VGS-VT)
c. ID=k(VGS-VT)2
d. none of the above

Ans: c

14. The drain characteristics of MOSFET is _______.
a. VDS to ID
b. VGS to ID
c. both of the above
d. none of the above

Ans: a

15. The transfer characteristics of MOSFET is _____.
a. VDS to ID
b. VGS to ID
c. both of the above

Before solving this questions I suggest you must read this basic electronics

 





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